Based on the management policy of "contributing to the realization of a sustainable society in the energy and environment business," Fuji Electric is working to address social and environmental issues including global warming by promoting the SDGs throughout its corporate activities, including its supply chain.
In order to achieve this, it is important to improve the efficiency of the power electronics in each system and the performance of the power semiconductor devices that drive them.
Fuji Electric | Power semiconductor applications
Fuji Electric offers a wide range of power semiconductor devices depending on the application.
1. In the field of small-capacity equipment
Fuji Electric has developed industrial IGBTs and superjunction SJ-MOSFETs for power conversion such as small-capacity IPMs for motor drive systems for home appliances, power conditioners, and uninterruptible power supply units.
2. Medium-capacity equipment field
Fuji Electric has launched industrial IGBT modules for industrial applications such as general-purpose inverters, servo motor control for machine tools and robots, motor control for commercial air conditioners, and UPS power conversion.
As countries around the world begin to shift from gasoline vehicles to xEVs, the demand for power semiconductors for automotive applications is expected to increase in the future. For automotive applications, Fuji Electric already has IGBT modules that can be used for xEV motor control.
3. Large-capacity equipment field
We offer IGBT modules for the conversion of renewable energy sources such as wind power generation and variable speed drives for railway vehicle motors.
In addition, we have developed silicon carbide (SiC) power semiconductor devices, which are next-generation power semiconductors with excellent characteristics such as low loss, high withstand voltage, and ability to operate at high temperatures.
The following is a brief summary of Fuji Electric's advanced achievements in the development of power semiconductors.
The seventh-generation "X Series" is used for industrial use
1200V/2400A RC-IGBT module
Fuji Electric has commercialized the 7th-generation X-Series IGBT module through technological innovation in chips and packaging, and has achieved high power density with low loss and high reliability of IGBT modules.
In addition, we have developed an RC-IGBT that makes IGBTs and FWDs monolithic, which reduces the number of chips and the total chip area while reducing losses to achieve higher power density.
We will add the newly developed 1200V/2400A rated PrimePACK™3+ with RC-IGBT to our lineup.
PrimePACK™：
Trademarks or registered trademarks of Infineon Technology AG.
The X-Series chip technology, which significantly reduces collector, emitter saturation, and voltage VCE (sat), and the highly high-quality thin wafer processing technology that improves the trade-off between saturation voltage and switching loss, reduces power loss by 16% compared to conventional products.
In addition, the X-Series RC-IGBT modules have significantly reduced thermal resistance, enabling higher current ratings under the same conditions.
At the same time, due to the use of high heat-resistant silica gel, it can increase the maximum junction temperature to 175°C during continuous operation, effectively ensuring its high reliability.
2nd generation 1200V All-SiC module
Expansion of the product range
At present, the characteristics of power semiconductor devices using Si are approaching the limits of theoretical research on the physical properties of their materials, and SiC is attracting attention as a next-generation semiconductor material that can surpass Si.
In 2017, Fuji Electric introduced the All-SiC 2in1 module, which is a "first-generation SiC-MOSFET chip with a trench-gate structure" in a full-mode package with a rated capacity of 1200V/400A.
Today, in order to expand this product lineup, Fuji Electric has developed an All-SiC 2in1 module that ensures compatibility in form factor and terminal configuration using a standard package of Si-IGBT modules (W:108mm D:62mm), and has adopted a second-generation SiC-MOSFET chip to extend the rated capacity to 1200V/600A, and a laminated structure for the main terminal part of the package to reduce the internal inductance.
The simulation results show that compared with the Si-IGBT module, the All-SiC module can reduce the power loss of the inverter at 5kHz and 20kHz at the carrier frequency under the condition of output current Io(rms)=200A.
Therefore, this module can be used to reduce losses and achieve high density and large capacity.
In addition, by increasing the frequency of switches, it is possible to use small passive components to miniaturize power electronics.
It is available in a small package "P644".
The 7th generation "X-Series" IGBT-IPM
IPM is a high-performance IGBT module that incorporates an IGBT gate drive circuit and a protection circuit in an IGBT module consisting of an IGBT and an FWD.
In order to meet the requirements for further miniaturization, high efficiency, and high output of power conversion devices, we have adopted the "P644" package in the "X Series" IPM series, which applies the 7th generation chip technology and packaging technology.
In the X-Series IPM "P644" product lineup:
The rated voltage of 650V is available in 50A and 75A
The rated voltage of 1200V is available in 25A and 35A
Compared to the V-series IPM 7in1 "P636" in the same range,
The module setup area on the cooler has been reduced by 12%.
In addition, the X-Series IPM offers the following advantages:
1. The drift layer is thinned by the micro-refinement of the surface trench gate structure and the processing technology of thin wafers. At the same time, the power loss is greatly reduced by applying the 7th generation chip technology to improve the equalization characteristics of IGBT turn-off loss and conduction loss, and to optimize the gate drive circuit to reduce the turn-on loss during switching.
2. In order to achieve high-temperature operation, this product uses high-heat-resistant gel and high-reliability solder, etc., and expands the Tvjop from 125°C to 150°C in the V series.
3. When the lower axle arm is protected, the IGBT of the braking unit can act independently, so as to prevent the damage caused by overvoltage of the semiconductor components.
With the help of these new technologies, the X-Series IPM achieves a higher output power than the V-Series in addition to the advantages of miniaturization.
This article briefly introduces Fuji Electric's advanced achievements in the development of power semiconductors.
At present, the society is paying more and more attention to environmental issues such as energy saving, low-carbon, and carbon-free, and power electronics is the key technology to deal with the above problems, and power semiconductors are the key devices in power electronics. We will continue to contribute to the realization of a sustainable society through technological innovation.
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