Fuji Electric Corporation (headquartered in Tokyo, Japan, President Mitsuhiro Kitazawa) is pleased to announce the addition of a 1200 V rated voltage to its discrete IGBT*1 XS series line, providing industry-leading low losses.
As the world moves closer to a low-carbon society, there is an expectation that energy conservation will be further achieved in social and industrial infrastructure. Power semiconductor devices are key devices for power conversion and power manipulation in power electronic devices*2 such as uninterruptible power supplies (UPS), power conditioning systems (PCS), and electric vehicle (EV) chargers. UPS is indispensable for the stable operation of data centers, which are expanding its investment due to digital innovation, while PCS is essential for renewable energy power generation facilities, and EV chargers support EV charging infrastructure. The role of a power semiconductor device is to switch (turn the power supply on and off) in repetitive, short-term increments in a circuit to manipulate the voltage and switch between DC and AC.
Fuji Electric's discrete IGBT XS series contributes to power savings by reducing power losses during switching (switching losses) and when current is active in circuits (steady-state losses). In addition to the existing products with a rated voltage of 650V, the company has now started to sell a new type of product with a rated power of 1200V to accommodate devices in various capacity bands, including UPSs with a voltage rating of several tens of kVA. They expect the expanded product line to help with the design of the customer's equipment. It is expected that by 2023, the shopping mall for industrial equipment equipped with these products will grow from the current 60 billion yen to 70 billion yen*3, and will expand globally, especially in China and Taiwan, where demand is strong.
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