Mitsubishi Electric's newly developed new MPD series IGBT modules will be unveiled at PCIM Asia 2012 (BoothNo). :301) June 19-21 at the Shanghai World Expo Complex. The new MPD series is ideal for liquid cooling and is a high-current power module with good heat dissipation performance and strong reliability.
The new MPD series IGBT modules are compact in appearance and use a new solderless AI substrate to provide higher temperature cycling capability. The internal structure for high current is specially packaged, and the internal package has low inductance. The sixth-generation IGBT modules with low-loss CSTBTTM silicon wafer technology offer a wider safe operating area, excellent short-circuit robustness, and the best VCE(sat)vs Eoff compromise performance. The new MPDs are suitable for large-scale motor drives, distributed generation (e.g. wind power) and high-power UPS.
In addition, the new MPD series IGBT modules are divided into 1200V and 1700V rated voltages, of which the CM2500DY-24S has a rated current of up to 2500 A, a maximum junction temperature of 175°C for silicon wafers, and a maximum operating temperature of 150°C for silicon wafers. Its perforated terminals allow for lower contact impedance for a more reliable long-term electrical connection, separating the AC and DC main terminals for easy DC busbar connection.
Mr. · Yutoshi Taniguchi, Deputy General Manager and Director of the Semiconductor Division of Mitsubishi Electric (Shanghai) Co., Ltd., said, "Because the market attaches great importance to the heat dissipation function of IGBT modules, Mitsubishi Electric's new MPD series of IGBTs is very suitable for water cooling and heat dissipation, which can better meet market demand."
At present, all semiconductor power devices are made of silicon materials, and industry insiders believe that the energy-saving capacity of silicon materials is close to the limit. At present, people are concerned about the development of silicon carbide materials. Due to its excellent physical and electrical properties, silicon carbide is expected to significantly surpass silicon materials in terms of power conversion capacity and low consumption.
In 2010, Mitsubishi Electric was the first company in the world to successfully develop an all-silicon carbide IPM with a drive circuit and a protection circuit. Compared to IPM using silicon, the power consumption is reduced by 70% and the device size is reduced by 50%. In addition, for the first time in the world, a power device equipped with a silicon carbide diode was used and commercialized in a home air conditioner.
At this exhibition, Mitsubishi Electric also exhibited a number of series products, including J series EV-IPM and EV T-PM automotive modules; and DIPIPMTM (Dual In-Line Intelligent Power Module) for industrial inverter appliances, etc. It aims to provide products and technologies with lower power consumption, lower cost and higher stability for the Chinese market.
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