FujiElectric IGBT Module, 1.2 kA, Vce=3300 V

Create Date: 2024-8-30 12:03:23|Source: Fuji Electric/Fujielectric

  • Brand:
    FujiElectric
    Origin:
    Japan
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    Delivery time:
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    Model:
    IGBT module, 1.2 kA, Vce=3300 V
    Product Introduction
    An insulated gate bipolar transistor, or IGBT, is a three-terminal power semiconductor device,
Product Description
Fuji Electric IGBT module, 1.2 kA, Vce=3300 V, 6-pin M152 package
FujiElectric IGBT Module, 1.2 kA, Vce=3300 V
Fuji Electric, IGBT Module 1 Pack

V-Series, the 6th generation of the field

U/1U U4 series, 5th generation field cut-off

hh series, planar NPT high-speed selector IGBT

IGBT Discretes & Modules, Fuji Electric

An insulated gate bipolar transistor, or IGBT, is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining an isolated gate FET for control inputs and a bipolar power transistor for switching in a single device.

Attribute Numeric value

The maximum continuous collector current is 1.2 kA

Maximum collector-emitter voltage 3300 V

The maximum gate emitter voltage ±20V

The maximum power dissipation is 14.7 kW

Package type M152

Mounting Type: Screw mounting

Number of pins 6

Dimensions 190 x 140 x 38mm

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