FujiElectric IGBT Module N-Channel, Serial

Create Date: 2024-8-30 12:03:23|Source: Fuji Electric/Fujielectric

Product Description
IGBT Module, 2 pcs., Fuji Electric
FujiElectric IGBT Module N-Channel, Serial
V-Series, Gen 6 Field Stops

U/U4 Series, Gen 5 Field Stops

S-Series, 4th generation NPT

IGBT Discretes & Modules, Fuji Electric

An insulated gate bipolar transistor, or IGBT, is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining an isolated gate FET for control inputs and a bipolar power transistor for switching in a single device.

The maximum continuous collector current is 900 A

Maximum collector-emitter voltage 1200 V

The maximum gate emitter voltage ±20V

The maximum power dissipation is 5.1 kW

Package type M271

Configure Serial

Mounting Type: Screw mounting

Channel type N

Number of pins 4

Dimensions 172 x 89 x 38mm

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