FujiElectric IGBT discrete semiconductors

Create Date: 2024-8-30 12:03:23|Source: Fuji Electric/Fujielectric

Product Description
An insulated gate bipolar transistor, or IGBT, is a three-terminal power semiconductor device known for its high efficiency and fast switching. IGBTs combine the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining an isolated gate FET for control inputs and a bipolar power transistor for switching in a single device.
FujiElectric IGBT discrete semiconductors
Maximum continuous collector current 50 A

The maximum collector-emitter voltage is 600 V

The maximum gate emitter voltage ±20V

The maximum power dissipation is 360 W

Package type TO-247

Mounting Type: Through Hole

Channel type N

Number of pins 3

Transistor configuration single

Dimensions 15.9 x 5.03 x 20.95mm

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